Photodiodes

We are your expert for photodiodes

Whether 1500, 1100 nm or lower in the power range, we at Chips 4 Light are your experts for silicon PIN photodiodes.  In addition to our expertise as a distributor for photodiodes, phototransistors, detector arrays, we also advise you on the development of your specific solution for numerous applications in electronics, sensor technology and optical communication. We also recommend our pin photodiodes for applications in sensor technology, e.g. as dimmers for backlighting or ambient light sensors. 

  Product Wavelength of max. Sensitivity Spectral Bandwith Angle of Sensitivity Photo Sensitive Area Dimension Data Sheet Inquiry
LA PD120AP1 50 LA PD120AP1
560 nm 390 - 800 nm 120 ° 7.700 mm² 2.97 x 2.97. x 0.28 mm³
LA PD28AP1 50 LA PD28AP1
560 nm 390 - 800 nm 120 ° 0.270 mm² 0.72 x 0.72 x 0.28 mm³
LA PD28AP2 300 LA PD28AP2
570 nm 430 - 700 nm 120 ° 0.270 mm² 0.72 x 0.72 x 0.28 mm³
LA PD28AP3 300 LA PD28AP3
570 nm 440 - 700 nm 120 ° 0.340 mm² 0.72 x 0.72 x 0.2 mm³
LA PD15AP1 50 LA PD15AP1
630 nm 440 - 650 nm 120 ° 0.065 mm² 0.375 x 0.375 x 0.15 mm³
LA PD32HP1 50 LA PD32HP1
780 nm 430 - 1100 nm 120 ° 0.360 mm² 0.8 x 0.8 x 0.22 mm³
LA PD18HP1 50 LA PD18HP1
800 nm 430 - 1100 nm 120 ° 0.026 mm² 0.44 x 0.44 x 0.305 mm³
LA PD240BP1 50 LA PD240BP1
800 nm 300 - 1100 nm 120 ° 32.500 mm² 6.0 x 6.0 x 0.305 mm³
LA PD2612HP2 300 LA PD2612HP2
800 nm 580 - 1070 nm 120 ° 0.053 mm² 0.67 x 0.3 x 0.28 mm³
LA PD2612HP1 50 LA PD2612HP1
810 nm 590 - 1010 nm 120 ° 0.055 mm² 0.67 x 0.3 x 0.28 mm³
C4L PD55S1 C4L-PD55S1
850 nm 400 -1100 nm 120 ° 1.000 mm² 1.4 x 1.4 x 0.1 mm³
LA PD28NP1 50 LA PD28NP1
850 nm 825 - 875 nm 120 ° 0.292 mm² 0.7 x 0.7 x 0.22 mm³
LA PD29395HP1 50 LA PD29395HP1
850 nm 400 - 1070 nm 120 ° 14.000 mm² 2.40 x 7.45 x 0.22 mm³
LA PD3323HP1 50 LA PD3323HP1
880 nm 400 - 1100 nm 120 ° 0.310 mm² 0.6 x 0.85 x 0.22 mm³
LA PD11052HP1 50 LA PD11052HP1
900 nm 430 - 1100 nm 120 ° 2.500 mm² 1.32 x 2.79 x 0.305 mm³
LA PD120HP2 50 LA PD120HP2
900 nm 430 - 1100 nm 120 ° 7.100 mm² 2.97 x 2.97 x 0.305 mm³
LA PD165HP1 50 LA PD165HP1
900 nm 430 - 1100 nm 120 ° 15.400 mm² 4.2 x 4.2 x 0.35 mm³
LA PD200HP1 50 LA PD200HP1
900 nm 430 - 1100 nm 120 ° 21.700 mm² 5.04 x 5.04 x 0.305 mm³
LA PD26HP1 50 LA PD26HP1
900 nm 430 - 1100 nm 120 ° 0.230 mm² 0.67 x 0.67 x 0.28 mm³
LA PD400HP1 50 LA PD400HP1
900 nm 430 - 1100 nm 120 ° 88.300 mm² 10.0 x 10.0 x 0.305 mm³
LA PD7752HP1 50 LA PD7752HP1
900 nm 430 -1100 nm 120 ° 1.600 mm² 1.3 x 1.96 x 0.305 mm³
LA PD20HP1 50 LA PD20HP1
915 nm 430 - 1100 nm 120 ° 0.090 mm² 0.5 x 0.5 x 0.3 mm³
LA PD45HP1 50 LA PD45HP1
920 nm 600 - 1040 nm 120 ° 0.880 mm² 1.17 x 1.17 x 0.28 mm³
LA PD120BP1 50 LA PD120BP1
940 nm 350 - 1100 nm 120 ° 7.700 mm² 2.97 x 2.97 x 0.28 mm³
LA PD120BP2 50 LA PD120BP2
940 nm 350 - 1100 nm 120 ° 8.000 mm² 2.97 x 2.97 x 0.22 mm³

Pin photodiodes for applications with high sensitivity in sensor technology

Photodiodes are diodes that convert incident light (photons) into an electric current at a p-n junction. This happens due to the photoelectric effect that takes place inside the diode. A photodiode can consist of a wide variety of semiconductor materials, depending on the wavelength of the incident light. The way a photodiode works is as follows:
The incident photons cause an electron-hole pair in the space charge region of a p-n junction. As is usual with a semiconductor, the electrons are accelerated towards the n-side and the holes towards the p-side. These opposing movements increase the electric field strength in the space charge zone and the barrier height decreases. The voltage can be tapped at the diode. A current can only flow if the energy of the photons is higher than the energy of the band gap. As the energy is dependent on the wavelength of the photons, it also becomes clear why different materials have to be used for different wavelength ranges.
A photodiode is characterized by its dark current. This is the current that continues to flow even when it is dark. Although this current is very low, it is also temperature-dependent and must therefore not be ignored.

Features of our diodes:

  • Our highly sensitive silicon PIN photodiodes as a chip from 390 to 1500 nm cover a broad spectrum
  • Radiation-sensitive, active area with different mm² in the photosensitive range
  • Suitable for visible and invisible light
  • Larger modules than detector arrays

Optoelectronics is our expertise

  • Offer of miniaturized light sources
    Special requirements, for example in sensor technology or medicine, often require particularly small light sources such as point light sources. We have an idea.

  • Specification for your project
    In our range of extensive optoelectronic components we will find the right solution for you together.

  • Sorting according to customer specifications
    At Chips 4 Light, we have the equipment to precisely sort the required quantity in the required specification on film, gel or waffle pack with our LED chip sorters.

  • Long-term storage
    In our dry storage cabinet we store LED chips professionally in gel- or waffle-pack for a longer period of time to support the project runtimes of our customers.

 

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LED Chip Umsortierung auf Gel und Wafflepack small

We will gladly advise you!

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